Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

600

V

Collector-Emitter Voltage

VCEO

400

V

Emitter-Base Voltage

VEBO

9

V

Collector Current

IC

2

A

Total Power Dissipattion

PC

35

W

Storage Temperature

Tstg

-65～150

℃

Junction Temperature

Tj

150

℃

Parameter

Symbol

Test  conditions

Min

Max

Unit

Collector-Base Breakdown Voltage

BVCBO

Ic=0.5mA,Ie=0

600

V

Collector-Emitter Breakdown Voltage

BVCEO

Ic=10mA,Ib=0

400

V

Emitter-Base   Breakdown  Voltage

BVEBO

Ie=1mA,Ic=0

9

V

Collector-Base  Cutoff  Current

ICBO

Vcb=550V, Ie=0

10

μA

Collector-Emitter  Cutoff  Current

ICEO

Vce=400V, Ib=0

20

μA

Emitter-Base  Cutoff  Current

IEBO

Veb=9V, Ic=0

20

μA

  DC Current Gain

hFE(1)

Vce=5V,Ic=100mA

10

40

  DC Current Gain

hFE(2)

Vce=5V,Ic=1mA

9

Collector-Emitter Saturation Voltage

VCE(sat)

Ic=1.5A,Ib=0.5A

1.2

V

Base-Emitter Saturation Voltage

VBE(sat)

Ic=1.5A,Ib=0.5A

1.5

V

Storage Time

Ts

VCC=250V

IC=5IB

IB1=- IB2=0.2A

3

Falling Time

Tf

0.8

uS