Shenzhen Sanpu Semiconductor CO.,LTD
[China]

Address:
Building 7th,Industrial Area of High Tech,Fuyong Town Shenzhen Guangdong 518000 China

Phone:
86-0755-33935557

Contact name:
Eric Fu , Manager

Shenzhen Sanpu Semiconductor CO.,LTD

COMPONMENT SPECIFICATION

SPS D13005

SSAN PU SEMICONDUCTOR

HIGH VOLTAGE POWER TRANSISTOR

FEATURES: High Voltage Capability

High Speed Switching

Wide SOA

APPLICATIONS: Flourscent Lamp

Electronic Ballast

Electronic Transformer

LIMMITING VALUES(Tj=25℃ Unless OtherWise Stated )

ELECTRICAL CHARACTERISTICS (Tj=25℃ Unless Otherwise Stated)

Parameter	Symbol	Test conditions	Min	Max	Unit
Collector-Base Breakdown Voltage	BVCBO	Ic=0.5mA,Ie=0	700		V
Collector-Emitter Breakdown Voltage	BVCEO	Ic=10mA,Ib=0	400		V
Emitter-Base Breakdown Voltage	BVEBO	Ie=1mA,Ic=0	9		V
Collector-Base Cutoff Current	ICBO	Vcb=650V, Ie=0		10	μA
Collector-Emitter Cutoff Current	ICEO	Vce=400V, Ib=0		20	μA
Emitter-Base Cutoff Current	IEBO	Veb=9V, Ic=0A		20	μA
DC Current Gain	hFE(1)	Vce=5V,Ic=1A	10	40
DC Current Gain	hFE(2)	Vce=5V,Ic=1mA	9
Collector-Emitter Saturation Voltage	VCE(sat)	Ic=1.0A,Ib=0.2A		0.5	V
		Ic=2.0A,Ib=0.4A		0.7
		Ic=4.0A,Ib=1.0A		1.5
Base-Emitter Saturation Voltage	VBE(sat)	Ic=2.0A,Ib=0.4A		1.2	V
Storage Time	Ts	VCC=250V IC=5IB IB1=- IB2=0.5A		4
Falling Time	Tf			0.8	uS
Falling Time	Tf			0.8